ANSWERS
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Student's Selected Options vs Correct Answers - BMT0000824
Questions Student's Answers Correct Answers Marks
1. In a transistor the collector junction is more heavily doped than the emitter junction
2. The static current gain of a transistor is given by
3. A semiconductor doped to have electrons as majority charge carriers is ???(material).
4. Three phase rectification provides smoother output than single phase?
5. For three phase ac rectification how many diodes are required?
6. As an amplifier, a transistor operates in the??????????????? region
7. One purpose of using a capacity (usually electrolytic) in a power supply is for
8. In full wave rectification with a center-tap transformer, how many diodes are required?
9. ??is responsible for partial conduction in semiconductor.
10. Materials whose electrical properties lie between those of conductors and insulators are known as
11. The static output resistance of a transistor is given by
12.

The purpose of using a capacitor (usually ceramic) in a power supply is for

13.

The condition for maximum power transfer is that the load resistance must be equal to

14. About???? volts is required to overcome the potential barrier is silicon diode.
15. During partial conduction in a semiconductor ?????? move relative to electrons.
16. As a switch that is ON the transistor operates in the?????region
17. In removing ac ripples with a capacitor, it must be connected in parallel with the load
18. The emitter current is the sum of base current and collector current.
19. The static input resistance of a transistor is given by
20. Apart from a capacitor,??. can also be used remove ac ripples.
21. Phosphorous is a donor element.
22.

Which of the following can be used for voltage stabilization?

23. The process of removing ac ripples from a rectified ac power is called
24. A semiconductor doped to have holes as majority charge carriers is a ???(material).
25.

The electric field produced due to recombination of holes and electrons at a p-n junction creates the

26. About ???? volts is required to overcome the potential barrier is germanium diode.
27. Zener diodes are designed to operate in
28. In conductors, the valence and conduction bands overlap
29. As a switch that is OFF the transistor operates in the??????????region.
30. The optimum point on a transistor load line is called the
31. For proper transistor action, the base-emitter junction must be forward biased, and the collector-emitter junction must be reverse biased for a common emitter configuration.
32. A diode behaves like a non-return valve.
33. Boron is an acceptor element.
34. As a switch the transistor operates in how many regions?
35. Doping is the process of introducing????.into a semiconductor material.
36. The shells of an atom represent various energy levels
37. In an n-p-n transistor action, all the electrons from the emitter do not recombine with hole at the base.
38. The ninth shell of an atom is capable of containing ??????. electrons.
39. A p-type material joined to an n-type material forms an electronic component called
40. A semiconductor in its pure state is said to be
1. FALSE
2. Ic/Ib
3. n-type
4. TRUE
5. 6
6. active
7. smoothening
8. 4
9. impurity elements
10. semi-conductors
11. Vce/Ib
12. Smoothening
13. Source resistance
14. 0.7
15. heat
16. saturation
17. TRUE
18. TRUE
19. Vce/Ic
20. inductor
21. TRUE
22. Zener diode
23. smoothening
24. p-type
25. Depletion layer
26. 0.3
27. all of the above
28. TRUE
29. cutoff
30. Q-point
31. FALSE
32. TRUE
33. FALSE
34. 4
35. impurity elements
36. TRUE
37. FALSE
38. 162
39. transistor
40. intrinsic
1. TRUE
2. Ic/Ib
3. n-type
4. TRUE
5. 6
6. active
7. smoothening
8. 2
9. heat
10. semi-conductors
11. Vce/Ic
12. Filtering
13. Source resistance
14. 0.7
15. holes
16. saturation
17. TRUE
18. TRUE
19. Vbe/Ib
20. inductor
21. TRUE
22. Zener diode
23. filtering
24. p-type
25. Depletion layer
26. 0.3
27. reverse bias mode
28. TRUE
29. cutoff
30. Q-point
31. TRUE
32. TRUE
33. TRUE
34. 2
35. impurity elements
36. TRUE
37. TRUE
38. 162
39. diode
40. intrinsic
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