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Student's Selected Options vs Correct Answers - BME0001724
Questions Student's Answers Correct Answers Marks
1. A semiconductor doped to have holes as majority charge carriers is a ???(material).
2. The optimum point on a transistor load line is called the
3. A p-type material joined to an n-type material forms an electronic component called
4.

The electric field produced due to recombination of holes and electrons at a p-n junction creates the

5. During partial conduction in a semiconductor ?????? move relative to electrons.
6.

The purpose of using a capacitor (usually ceramic) in a power supply is for

7. The process of removing ac ripples from a rectified ac power is called
8. Apart from a capacitor,??. can also be used remove ac ripples.
9. One purpose of using a capacity (usually electrolytic) in a power supply is for
10. In full wave rectification with a center-tap transformer, how many diodes are required?
11. Boron is an acceptor element.
12. For three phase ac rectification how many diodes are required?
13. Zener diodes are designed to operate in
14. In removing ac ripples with a capacitor, it must be connected in parallel with the load
15. As a switch that is ON the transistor operates in the?????region
16. The shells of an atom represent various energy levels
17. For proper transistor action, the base-emitter junction must be forward biased, and the collector-emitter junction must be reverse biased for a common emitter configuration.
18. A diode behaves like a non-return valve.
19. The emitter current is the sum of base current and collector current.
20. In an n-p-n transistor action, all the electrons from the emitter do not recombine with hole at the base.
21. As a switch that is OFF the transistor operates in the??????????region.
22. A semiconductor doped to have electrons as majority charge carriers is ???(material).
23. A semiconductor in its pure state is said to be
24. The static input resistance of a transistor is given by
25. Three phase rectification provides smoother output than single phase?
26. The static current gain of a transistor is given by
27. ??is responsible for partial conduction in semiconductor.
28. Doping is the process of introducing????.into a semiconductor material.
29. In conductors, the valence and conduction bands overlap
30. The static output resistance of a transistor is given by
31. As a switch the transistor operates in how many regions?
32. About???? volts is required to overcome the potential barrier is silicon diode.
33.

The condition for maximum power transfer is that the load resistance must be equal to

34. As an amplifier, a transistor operates in the??????????????? region
35. The ninth shell of an atom is capable of containing ??????. electrons.
36. Phosphorous is a donor element.
37. Materials whose electrical properties lie between those of conductors and insulators are known as
38. About ???? volts is required to overcome the potential barrier is germanium diode.
39.

Which of the following can be used for voltage stabilization?

40. In a transistor the collector junction is more heavily doped than the emitter junction
1. p-type
2. Saturation point
3. diode
4. Depletion layer
5. holes
6. Smoothening
7. filtering
8. diode
9. filtering
10. 2
11. TRUE
12. 6
13. reverse bias mode
14. TRUE
15. saturation
16. TRUE
17. FALSE
18. TRUE
19. TRUE
20. TRUE
21. cutoff
22. n-type
23. intrinsic
24. Vbe/Ib
25. TRUE
26. Ic/Ib
27. heat
28. impurity elements
29. TRUE
30. Vce/Ic
31. 2
32. 0.7
33. Source resistance
34. active
35. 162
36. TRUE
37. semi-conductors
38. 0.3
39. Zener diode
40. FALSE
1. p-type
2. Q-point
3. diode
4. Depletion layer
5. holes
6. Filtering
7. filtering
8. inductor
9. smoothening
10. 2
11. TRUE
12. 6
13. reverse bias mode
14. TRUE
15. saturation
16. TRUE
17. TRUE
18. TRUE
19. TRUE
20. TRUE
21. cutoff
22. n-type
23. intrinsic
24. Vbe/Ib
25. TRUE
26. Ic/Ib
27. heat
28. impurity elements
29. TRUE
30. Vce/Ic
31. 2
32. 0.7
33. Source resistance
34. active
35. 162
36. TRUE
37. semi-conductors
38. 0.3
39. Zener diode
40. TRUE
34 / 40